Samsung’s new UFS 4.0 drives will increase the speed and energy efficiency of smartphones

Samsung has unveiled new drives Universal Flash Storage specification 4.0. Mobile devices equipped with them will be able to work faster and at the same time consume less energy.

The throughput of UFS 4.0 is up to 23.2 Gbps per lane, which is twice the performance of UFS 3.1. The use of the upgraded 7th generation Samsung V-NAND memory and its own controller will make it possible to increase the speed of sequential reading and writing up to 4200 MB/s and 2800 MB/s, respectively.

The South Korean company was able to thoroughly work on reducing energy consumption. Thus, the sequential read speed of the drive is 6.0 MB/s per 1 mA, which is 46% higher than the previous generation of cells, and the module size up to 1 TB of capacity does not exceed 11×13×1 mm.

Samsung UFS 4.0 has been approved by the JEDEC Semiconductor Standards Committee. Mass production launch should occur in the 3rd quarter of this year. It is assumed that the memory will be used in new smartphones with 5G support, automation systems, AR and VR devices. It is possible that the first products with UFS 4.0 will be released in late 2022 – early 2023.

Similar Posts

Leave a Reply

Your email address will not be published. Required fields are marked *